Schottky diode characteristics on high-growth rate LPCVD <b><i>?</i></b>-Ga<sub>2</sub>O<sub>3</sub> films on (010) and (001) Ga<sub>2</sub>O<sub>3</sub> substrates
نویسندگان
چکیده
High crystalline quality thick ?-Ga 2 O 3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial thin films grown Sn-doped (010) and (001) substrates by LPCVD with fast rate varying from 13 to 21 ?m/h. A higher temperature results in highest reported date. Room current density–voltage data presented, diode characteristics, such as ideality factor, height, specific on-resistance, breakdown voltage studied. Temperature dependence (25–250 °C) on-resistance also analyzed J–V–T characteristics diodes.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0083659